SQJ260EP datasheet(2/12 Pages) VISHAY

2 / 12 page

SQJ260EP

www.vishay.com

Vishay Siliconix

S17-0664-Rev. A, 15-May-17

Document Number: 75486

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.5

2.0

2.5

VDS = VGS, ID = 250 μA

N-Ch 2

1.5

2.0

2.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 60 V

N-Ch 1

μA

VGS = 0 V

VDS = 60 V

N-Ch 2

VGS = 0 V

VDS = 60 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 60 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 60 V, TJ = 175 °C

N-Ch 1

250

VGS = 0 V

VDS = 60 V, TJ = 175 °C

N-Ch 2

250

On-state drain current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

N-Ch 1

VGS = 10 V

VDS

≥ 5 V

N-Ch 2

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 6 A

N-Ch 1

0.0155

0.0190

VGS = 10 V

ID = 10 A

N-Ch 2

0.0070

0.0085

VGS = 10 V

ID = 6 A, TJ = 125 °C

N-Ch 1

0.0301

VGS = 10 V

ID = 10 A, TJ = 125 °C

N-Ch 2

0.0131

VGS = 10 V

ID = 6 A, TJ = 175 °C

N-Ch 1

0.0366

VGS = 10 V

ID = 10 A, TJ = 175 °C

N-Ch 2

0.0160

VGS = 4.5 V

ID = 4 A

N-Ch 1

0.0200

0.0240

VGS = 4.5 V

ID = 8 A

N-Ch 2

0.0094

0.0115

Forward transconductance b

gfs

VDS = 10 V, ID = 6 A

N-Ch 1

VDS = 10 V, ID = 10 A

N-Ch 2

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

805

1100

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

1790

2500

Output capacitance

Coss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

355

500

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

800

1100

Reverse transfer capacitance

Crss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

Total gate charge c

VGS = 10 V

VDS = 30 V, ID = 1.5 A

N-Ch 1

VGS = 10 V

VDS = 30 V, ID = 3 A

N-Ch 2

Gate-source charge c

Qgs

VGS = 10 V

VDS = 30 V, ID = 1.5 A

N-Ch 1

2.6

VGS = 10 V

VDS = 30 V, ID = 3 A

N-Ch 2

5.4

Gate-drain charge c

Qgd

VGS = 10 V

VDS = 30 V, ID = 1.5 A

N-Ch 1

1.5

VGS = 10 V

VDS = 30 V, ID = 3 A

N-Ch 2

Gate resistance

f = 1 MHz

N-Ch 1

0.45

0.92

1.4

N-Ch 2

0.2

0.46

0.7

SQJ260EP bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

SQJ260EP bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

bảng dữ liệu tải về

Link URL