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L6986I bảng dữ liệu(PDF) 40 Page - STMicroelectronics

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L6986I bảng dữ liệu(HTML) 40 Page - STMicroelectronics

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Figure 46. Secondary winding current according to different leakage inductances (simulation)
LLEAKAGE = 2µH
LLEAKAGE = 2µH
LLEAKAGE = 200nH
LLEAKAGE = 50nH
Another effect of the leakage inductance is the ringing observed when the transition from the off-phase to
on-phase occurs. These oscillations are due to the LC circuit represented by the leakage inductance and the total
parasitic capacitance observed by the primary winding. This capacitance consists of several contributions:
Primary winding capacitance
Secondary winding capacitance, reflected to the primary side
Reverse capacitance of the Schottky diode, reflected to the primary side
The ringing at primary side could affect the regulation loop and falsely trigger the internal comparator, turning off
the high side MOSFET although it should be kept on. This might result in undesired jitter at switch node.
A proper masking time (TON MIN) filters these oscillations, which otherwise can affect the loop on the primary side.
Nevertheless, a snubber circuit to dump this ringing is always recommended, as shown in figure below.
Figure 47. Snubber circuit
Capacitance
The parasitic capacitance of a real transformer mainly consists of the following contributions:
Capacitance across each winding (CP and CS, in the picture below) due to the capacitve coupling between
the coil and the core. As already mentioned, the winding capacitances are involved in the ringing observed
during transition from off to on phase of the primary side
Interwinding capacitance (CWW), that is the capacitance between windings. The interwinding capacitance
should be reduced in order to limit disturbance on the primary side due to possible steep voltage transitions
present in the load connected to the secondary output
L6986I
Design of the external components
DS13647 - Rev 1
page 40/60



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