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SA2M bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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SA2M bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3 www.vishay.com Vishay General Semiconductor Revision: 10-Aug-2018 1 Document Number: 89930 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier DESIGN SUPPORT TOOLS FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer and telecommunication. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: color band denotes the cathode end Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 55 A IR 3.0 μA VF at IF = 2.0 A 0.854 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single SMA (DO-214AC) click logo to get started Available Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SA2B SA2D SA2G SA2J SA2K SA2M UNIT Device marking code 2B 2D 2G 2J 2K 2M Max. repetitive peak reverse voltage VRRM 100 200 400 600 800 1000 V Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 55 A Operating junction and storage temperature range TJ, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage IF = 1.0 A TJ = 25 °C VF (1) 0.911 - V IF = 2.0 A 0.954 1.1 IF = 1.0 A TJ = 125 °C 0.805 - IF = 2.0 A 0.854 0.95 Reverse current Rated VR TJ = 25 °C IR (2) 0.19 3 μA TJ = 125 °C 28 90 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.5 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 11 - pF |
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