VX80M60PWHM3SLASHP datasheet(2/5 Pages) VISHAY

2 / 5 page

VX80M100PW

www.vishay.com

Vishay General Semiconductor

Revision: 29-Jul-2020

Document Number: 87009

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 5 ms

Note

(1) Thermal resistance junction-to-case to follow JEDEC® 51-14 transient dual interface test method (TDIM)

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 10 A

TJ = 25 °C

VF (1)

0.52

IF = 20 A

0.61

IF = 40 A

0.77

0.84

IF = 10 A

TJ = 125 °C

0.44

IF = 20 A

0.55

IF = 40 A

0.66

0.74

Reverse current at rated VR per diode

VR = 70 V

TJ = 25 °C

IR (2)

0.0055

TJ = 125 °C

VR = 100 V

TJ = 25 °C

0.6

TJ = 125 °C

Typical junction capacitance

4.0 V, 1 MHz

3400

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VX80M100PW

UNIT

Typical thermal resistance per device

RθJC

(1)

0.6

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

VX80M100PW-M3/P

5.64

25/tube

Tube

VX80M100PWHM3/P (1)

5.64

25/tube

Tube

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