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VSS8D2M12HM3/H bảng dữ liệu(PDF) 1 Page - Vishay Siliconix

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Giải thích chi tiết về linh kiện  Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
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nhà sản xuất  VISHAY [Vishay Siliconix]
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VSS8D2M12
www.vishay.com
Vishay General Semiconductor
Revision: 21-Jan-2019
1
Document Number: 87443
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
DESIGN SUPPORT TOOLS
FEATURES
• Low-profile package
• Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Compatible to SOD-128 package case outline
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: SlimSMAW (DO-221AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base
P/NHM3
-
halogen-free,
RoHS-compliant,
and
AEC-Q101 qualified
Terminals:
matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
(3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
PRIMARY CHARACTERISTICS
IF(AV)
2 A
VRRM
120 V
IFSM
50 A
VF at IF = 2 A (TA = 125 °C)
0.59 V
TJ max.
175 °C
Package
SlimSMAW (DO-221AD)
Circuit configuration
Single
Top View
SlimSMAW (DO-221AD)
Bottom View
eSMP® Series
Cathode
Anode
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSS8D2M12
UNIT
Device marking code
2M12
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current (fig.1)
IF(AV) (1)
2
A
IF(AV) (2)
1.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Operating junction temperature range
TJ (3)
-40 to +175
°C
Storage temperature range
TSTG
-55 to +175


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