IXFJ13N50 datasheet(2/4 Pages) IXYS

2 / 4 page

2 - 4

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

min.

typ.

max.

= 10 V; I

D = 0.5 ID25, pulse test

7.5

9.0

iss

2800

oss

= 0 V, V

DS = 25 V, f = 1 MHz

300

rss

d(on)

= 10 V, V

DS = 0.5 • VDSS,27

d(off)

D = 0.5 • ID25, RG = 4.7 W (External)

100

g(on)

110

120

= 10 V, V

DS = 0.5 • VDSS, ID = 0.5 • ID25

thJC

0.7

K/W

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

GS = 0 V

Repetitive; pulse width limited by T

F = IS, VGS = 0 V,

1.5

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

J =25°C

250

J = 125°C

350

J =25°C

0.6

J = 125°C

1.25

J =25°C9

J = 125°C15

F = IS

-di/dt = 100 A/

ms,

R = 100 V

IXFJ 13N50

TO-268 Outline

Dim.

Inches

Millimeters

Min

Max

Min

Max

.193

.201

4.90

5.10

.106

.114

2.70

2.90

.045

.057

1.15

1.45

.075

.083

1.90

2.10

.016

.026

.040

.065

.057

.063

1.45

1.60

.543

.551

13.80 14.00

.488

.500

12.40 12.70

.624

.632

15.85 16.05

.524

.535

13.30 13.60

.215 BSC

5.45 BSC

1.365

1.395

34.67 35.43

.780

.800

19.81 20.32

.079

.091

2.00

2.30

.039

.045

1.00

1.15

All metal area are

solder plated

1 - gate

2 - drain (collector)

3 - source (emitter)

4 - drain (collector)

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFJ13N50 bảng dữ liệu(PDF) 2 Page - IXYS Corporation

IXFJ13N50 bảng dữ liệu(HTML) 2 Page - IXYS Corporation

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL