UPA2820T1S datasheet(1/5 Pages) DOINGTER

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Channel MOSFET uses advanced

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Description：

This N-

SGT to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

Features：

1) VDS=30V,ID=30 ,RDS(ON)

@VGS=10V

2) Improved dv/dt capability

3) Fast switching

4) 100% EAS Guaranteed

5) Green Device Available.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-Continuous (TC=25℃)

1

30

A

IDM

Drain Current – Pulsed

120

A

EAS

Single Pulse Avalanche Energy

29

mJ

IAS

17

A

PD

Power Dissipation (TC=25℃)

37

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

3.4

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

62

S1

G

D

S

Aval ancheCurrent

< mΩ

5

A

UPA2820T1S

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