UF640L-TN3-R datasheet(3/5 Pages) DOINGTER

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VSD

Source-Drain Diode Forward Voltage

ID=9A

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1.45

trr

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Qrr

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800

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Notes:

Typical Characteristics： (T

A=25℃ unless otherwise noted)

A: The value of RθJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance,

and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5%max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the

device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.

G. The maximum current rating is limited by bond-wires.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

F=18A dI/dt=500A/

μs

UF640L-TN3-R

UF640L-TN3-R bảng dữ liệu(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.