MMDF3N04HD datasheet(3/12 Pages) ONSEMI

3 / 12 page

MMDF3N04HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(Cpk

≥ 2.0) (Notes 4 & 6)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

4.3

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

0.015

0.15

2.5

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

0.013

500

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(Cpk

≥ 2.0) (Notes 4 & 6)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

2.0

4.9

3.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(Cpk

≥ 2.0) (Notes 4 & 6)

(VGS = 10 Vdc, ID = 3.4 Adc)

(VGS = 4.5 Vdc, ID = 1.7 Adc)

RDS(on)

−

100

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)

(Note 4)

gFS

2.0

4.5

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

32 Vd

0Vd

Ciss

−

450

900

Output Capacitance

(VDS = 32 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

130

230

Transfer Capacitance

f = 1.0 MHz)

Crss

−

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(on)

−

9.0

Rise Time

(VDD = 20 Vdc, ID = 3.4 Adc,

−

Turn−Off Delay Time

(VDD

20 Vdc, ID

3.4 Adc,

VGS = 10 Vdc, RG = 6 W) (Note 4)

td(off)

−

Fall Time

−

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 20 Vdc, ID = 1.7 Adc,

−

144

Turn−Off Delay Time

(VDD

20 Vdc, ID

1.7 Adc,

VGS = 4.5 Vdc, RG = 6 W) (Note 4)

td(off)

−

Fall Time

−

Gate Charge

−

13.9

(VDS = 40 Vdc, ID = 3.4 Adc,

−

2.1

−

(VDS

40 Vdc, ID

3.4 Adc,

VGS = 10 Vdc) (Note 4)

−

3.7

−

5.4

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 3.4 Adc, VGS = 0 Vdc) (Note 4)

(IS = 3.4 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.87

0.8

1.5

−

Vdc

Reverse Recovery Time

34Ad

0Vd

trr

−

(IS = 3.4 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 4)

−

dIS/dt = 100 A/ms) (Note 4)

−

7.0

−

Reverse Recovery Storage Charge

QRR

−

0.03

−

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

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