Bi−Directional Surge Protector

V

I

ESDL4151

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Working Peak Reverse Voltage

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

I/O Pin to GND

15

V

Breakdown Voltage

15.5

16.6

19.5

V

Reverse Leakage Current

@ 3.3 V, I/O Pin to GND

@ 15 V, I/O Pin to GND

0.1

1.0

mA

Clamping Voltage

Per IEC61000−4−2, ±8 kV Contact

See Figures 1 & 2

V

Clamping Voltage TLP

(Note 1)

(±4 kV Contact, ±8 kV Air)

21.3

V

(±8 kV Contact, ±16 kV Air)

22.9

V

Reverse Peak Pulse Current

IEC61000−4−5 (8x20 ms) Input Voltage

53

V

IEC61000−4−5 (8x20 ms) per Figure 11

11

A

Clamping Voltage 8x20 ms

Waveform per Figure A

(Note 2)

IEC61000−4−5 (8x20 ms) Input Voltage = 53 V

23

26

V

Dynamic Resistance

I/O Pin to GND (8x20 ms)

0.43

W

Junction Capacitance

0.80

1.0

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.