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STS2DNF30L bảng dữ liệu(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

tên linh kiện STS2DNF30L
Giải thích chi tiết về linh kiện  Dual N-Channel MOSFET uses advanced trench technology
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nhà sản xuất  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Trang chủ  http://www.doingter.cn/
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STS2DNF30L bảng dữ liệu(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  STS2DNF30L Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STS2DNF30L Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STS2DNF30L Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STS2DNF30L Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Trr
Body Diode Reverse Recovery Time
I F =6.9A, dI/dt=100A/
---
16.5
---
Ns
Qrr
Body Diode Reverse Recovery Charge
I F =6.9A, dI/dt=100A/
---
7.8
---
Nc
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
A:The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C. The value in any a given application depends on the user's
specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C.The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient.
D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5%
max.
E.These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The SOA curve provides a single pulse rating.
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