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STP160N3LL bảng dữ liệu(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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nhà sản xuất  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Trang chủ  http://www.doingter.cn/
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STP160N3LL bảng dữ liệu(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  STP160N3LL Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP160N3LL Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP160N3LL Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP160N3LL Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. STP160N3LL Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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—
2 —
Electrical Characteristics:(T
C=25℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Ga te Voltage Drain Current
VGS=0V, VDS=30V
---
---
1
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1.3
1.8
2.4
V
RDS(ON)
Dra i n-Source On Resistance
2
VGS=10V,ID=40A
---
2.1
3
mΩ
VGS=4.5V,ID=20A
---
2.8
4
GFS
Forwa rd Tra nsconductance
VDS=0V, ID=0A
---
---
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=15V, VGS=0V, f=1MHz
3500
4565
5500
pF
Coss
Output Ca pacitance
570
785
1000
Crss
Reverse Tra nsfer Ca pacitance
500
710
900
Switching Characteristics
td(on)
Turn-On Delay Ti me
VDD=15V, ID=40A,
RGEN=3Ω.VGS=10V
---
12
---
ns
tr
Ri s e Time
---
8.5
---
ns
td(off)
Turn-Off Delay Ti me
---
77.5
---
ns
tf
Fa ll Ti me
---
19.5
---
ns
Qg
Tota l Gate Charge
VGS=10V, VDS=15V,
ID=40A
---
73
---
nC
Qgs
Ga te-Source Cha rge
---
12
---
nC
Qgd
Ga te-Drain “Miller” Charge
---
18
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=40A
---
0.8
-1.2
V
STP160N3LL



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