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2SC5346 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor |
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2SC5346 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1982 s Features q Satisfactory linearity of forward current transfer ratio hFE. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5 ±0.1 2.5 ±0.5 2.5±0.5 6.9 ±0.1 1.05 ±0.05 (1.45) 4.0 0.7 0.8 0.65 max. 0.45 +0.1 –0.05 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC *1 Tj Tstg Ratings 150 150 5 100 50 1.0 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency Collector output capacitance Symbol ICBO VCEO VEBO hFE *1 VCE(sat) NV fT Cob Conditions VCB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 150 5 130 typ 150 160 max 1 330 1 300 5 Unit µA V V V mV MHz pF *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *1h FE Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 1.2 ±0.1 0.65 max. 0.45 0.1 0.05 + – Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) |
Số phần tương tự - 2SC5346 |
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Mô tả tương tự - 2SC5346 |
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