HM830 datasheet(1/8 Pages) HMSEMI

tên linh kiện	HM830

Giải thích chi tiết về linh kiện	500V N-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

Trang chủ	http://www.hmsemi.com/

Logo

1 / 8 page

830 /

830

500V N-Channel MOSFET

General Description

This Power MOSFET is produced using SL semi‘s

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Features

• 5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V

• Low gate charge ( typical

20nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

C = 25°Cunless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

HM830

HM830F

Units

VDSS

Drain-Source Voltage

500

V

ID

Drain Current

- Continuous (TC = 25°C)

5.0

5.0*

A

- Continuous (TC = 100°C)

3.0

3.0 *

A

IDM

Drain Current

- Pulsed

(Note 1)

20

20*

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

305

mJ

EAR

Repetitive Avalanche Energy

(Note 1)

7.6

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C)

76

40

W

- Derate above 25°C

0.6

0.32

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

HM830

HM830F

Units

RθJC

Thermal Resistance, Junction-to-Case

1.2

3.65

°C/W

RθCS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

TO-220

G

S

D

TO-220F

G S

D

●

▲

◀

●

▲

◀

S

D

G

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

Số phần tương tự - HM830

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Shenzhen Huazhimei Semi...	HM8310	704Kb / 7P	2.0-7.0V 1.0A single channel H-bridge driver chip
	HM8312	381Kb / 3P	High withstand voltage low dropout micropower fast response LDO CMOS voltage regulator circuit
	HM8332	209Kb / 8P	Three Channels Integrated Power Management IC for Handheld Portable Equipment
List of Unclassifed Man...	HM8350A	389Kb / 3P	Hualon Microelectronics / HM8350A DIP 18 Pin Mar/Apr 2002

More results

Mô tả tương tự - HM830

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Fairchild Semiconductor	FQA24N50	734Kb / 8P	500V N-Channel MOSFET
	FQAF13N50	723Kb / 8P	500V N-Channel MOSFET
	FQD1N50	740Kb / 9P	500V N-Channel MOSFET
	FQD5N50	772Kb / 9P	500V N-Channel MOSFET
	FQL40N50	623Kb / 8P	500V N-Channel MOSFET
	FQL40N50F	635Kb / 8P	500V N-Channel MOSFET
	FQNL2N50B	598Kb / 8P	500V N-Channel MOSFET
	FQP2N50	717Kb / 8P	500V N-Channel MOSFET
	FQP4N50	733Kb / 8P	500V N-Channel MOSFET
	FQPF1N50	733Kb / 8P	500V N-Channel MOSFET

More results

HM830 bảng dữ liệu(PDF) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM830 bảng dữ liệu(HTML) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Số phần tương tự - HM830

Mô tả tương tự - HM830

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL