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2SC5037 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN triple diffusion planar type
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2SC5037 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC5037, 2SC5037A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
900
1000
900
1000
800
7
5
3
1
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
2SC5037A
2SC5037A
2SC5037A
2SC5037A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
VCE = 5V, IC = 0.15A, f = 1MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
min
800
8
6
typ
10
max
50
50
50
1.5
1.5
0.7
2.5
0.3
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
2SC5037A
2SC5037A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
φ3.2±0.1
1.45
±0.15
0.7
±0.1
7
°


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