2SC5035 datasheet(1/3 Pages) PANASONIC

tên linh kiện	2SC5035

Giải thích chi tiết về linh kiện	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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1

Power Transistors

2SC5035

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Low collector to emitter saturation voltage VCE(sat)

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

800

500

8

10

5

3

40

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO(sus)

*

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 800V, IE = 0

VEB = 5V, IC = 0

IC = 0.2A, L = 25mH

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 3A

IC = 3A, IB = 0.6A

VCE = 10V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,

VCC = 200V

min

500

15

8

typ

8

max

100

1

1.5

3

1.0

Unit

µA

V

MHz

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

9.9

±0.3

23

1

4.6

±0.2

2.9

±0.2

2.6

±0.1

2.54

±0.2

0.75

±0.1

1.2

±0.15

5.08

±0.4

φ3.2±0.1

1.45

±0.15

0.7

±0.1

7

°

*V

CEO(sus) Test circuit

X

L 25mH

15V

1

Ω

Y

G

6V

120

Ω

50/60Hz

mercury relay

Số phần tương tự - 2SC5035

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Toshiba Semiconductor	2SC503	464Kb / 3P	HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
	2SC5030	193Kb / 3P	NPN EPITAXIAL TYPE (STOROBE FLASH, MUDIUM POWER AMPLIFIER APPLICATIONS)
	2SC5030	146Kb / 5P	Strobe Flash Applications
	2SC5030	146Kb / 5P	Strobe Flash Applications
Panasonic Semiconductor	2SC5032	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

More results

Mô tả tương tự - 2SC5035

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Panasonic Semiconductor	2SC3795	63Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3970	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3973	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3975	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4152	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4985	40Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5034	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5063	62Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5393	34Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5457	37Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

More results

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