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2SC5026 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN epitaxial planer type(For low-frequency output amplification)
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2SC5026 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
High collector to emitter voltage VCEO.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–62
3:Emitter
Mini Power Type Package
4.5
±0.1
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
°
marking
321
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
80
80
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = 40V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
*2
IC = 500mA, IB = 50mA
*2
IC = 500mA, IB = 50mA
*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
80
80
5
120
60
typ
0.15
0.85
120
10
max
0.1
340
0.3
1.2
20
Unit
µA
V
V
V
V
V
MHz
pF
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
*2 Pulse measurement
*1h
FE Rank classification
Rank
R
S
hFE1
120 ~ 240
170 ~ 340
Marking symbol :
2A


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