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2SC4892 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN triple diffusion planar type(For power switching)
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2SC4892 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC4892
Silicon NPN triple diffusion planar type
For power switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Satisfactory linearity of foward current transfer ratio hFE
q
Allowing supply with the radial taping
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
900
900
800
7
2
1
0.3
15
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
IC = 0.2A, IB = 0.04A
IC = 0.2A, IB = 0.04A
VCE = 10V, IC = 0.05A, f = 1MHz
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V
min
800
6
3
typ
4
max
50
50
1.5
1
1
3
1
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±0.2
0.55
±0.1
2.5
±0.2
2.5
±0.2
5.0
±0.1
2.25
±0.2
1.2
±0.1
0.65
±0.1
0.55
±0.1
C1.0
90
°
C1.0
123
1.05
±0.1
0.35
±0.1


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