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FTK8970P bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

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Giải thích chi tiết về linh kiện  80V N-Channel MOSFETs
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FTK8970P bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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80V N-Channel MOSFETs
Electrical Characteristics (TJ=25℃, unless otherwise noted)
2020. 03. 23
2/5
Revision No : 0
FTK8970P
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
80
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.05
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=64V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 25V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
2
2.6
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.5
2.2
3.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
18
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=40V , VGS=10V , ID=10A
---
247
360
nC
Qgs
Gate-Source Charge3,4
---
63.5
125
Qgd
Gate-Drain Charge3,4
---
56
110
Td(on)
Turn-On Delay Time3,4
VDD=40V , VGS=10V , RG=10Ω
ID=10A
---
71
140
ns
Tr
Rise Time3,4
---
103
200
Td(off)
Turn-Off Delay Time3,4
---
291
580
Tf
Fall Time3,4
---
170
340
Ciss
Input Capacitance
VDS=30V , VGS=0V , F=1MHz
---
15010 23000
pF
Coss
Output Capacitance
---
772
1200
Crss
Reverse Transfer Capacitance
---
81
160
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.8
3.6
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
200
A
ISM
Pulsed Source Current
---
---
400
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=20A , di/dt=100A/µs
TJ=25℃
---
54
---
ns
Qrr
Reverse Recovery Charge
---
78
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V,VGS=10V,L=0.1mH,IAS=160A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings



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