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FTK4959D bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK4959D
Giải thích chi tiết về linh kiện  40V P-Channel MOSFETs
PDF  5 Pages
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FTK4959D bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

  FTK4959D Datasheet HTML 1Page - First Silicon Co., Ltd FTK4959D Datasheet HTML 2Page - First Silicon Co., Ltd FTK4959D Datasheet HTML 3Page - First Silicon Co., Ltd FTK4959D Datasheet HTML 4Page - First Silicon Co., Ltd FTK4959D Datasheet HTML 5Page - First Silicon Co., Ltd  
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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-40
---
---
V
IDSS
Drain-Source Leakage Current
VDS=
-40V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-32V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-25A
---
4.7
5.8
mΩ
VGS=
-4.5V , ID=-15A
---
6.4
8.3
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID=
-250uA
-1.2
-1.6
-2.5
V
gfs
Forward Transconductance
VDS=
-10V , ID=-3A
---
15
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=
-20V , VGS=-10V , ID=-45A
---
115
160
nC
Qgs
Gate-Source Charge3 , 4
---
16
25
Qgd
Gate-Drain Charge3 , 4
---
25
40
Td(on)
Turn-On Delay Time3 , 4
VDD=
-20V , VGS=-10V , RG=6Ω
ID=
-45A
---
41.6
82
ns
Tr
Rise Time3 , 4
---
12.7
26
Td(off)
Turn-Off Delay Time3 , 4
---
308
600
Tf
Fall Time3 , 4
---
70
140
Ciss
Input Capacitance
VDS=
-20V , VGS=0V , F=1MHz
---
6100
9100
pF
Coss
Output Capacitance
---
600
900
Crss
Reverse Transfer Capacitance
---
540
810
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
4.2
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-90
A
ISM
Pulsed Source Current
---
---
-180
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
VR=30V, IS=10A
di/dt=100A/µs , TJ=25℃
---
60
---
ns
Qrr
Reverse Recovery Charge
---
55
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=-25V,VGS=-10V,L=0.1mH,IAS=-59A.,RG=25Ω,Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
Electrical Characteristics (TJ=25℃, unless otherwise noted)
2020. 06. 25
2/5
Revision No : 0
FTK4959D
40V P-Channel MOSFETs



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