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FTK4910 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK4910
Giải thích chi tiết về linh kiện  40V N-Channel MOSFETs
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FTK4910 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

  FTK4910 Datasheet HTML 1Page - First Silicon Co., Ltd FTK4910 Datasheet HTML 2Page - First Silicon Co., Ltd FTK4910 Datasheet HTML 3Page - First Silicon Co., Ltd FTK4910 Datasheet HTML 4Page - First Silicon Co., Ltd FTK4910 Datasheet HTML 5Page - First Silicon Co., Ltd  
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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.034
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=6A
---
16
19
mΩ
VGS=4.5V , ID=4A
---
20
25
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.3
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
6
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=32V , VGS=10V , ID=6A
---
11.8
23
nC
Qgs
Gate-Source Charge2 , 3
---
1.7
3.4
Qgd
Gate-Drain Charge2 , 3
---
4
8
Td(on)
Turn-On Delay Time2 , 3
VDD=20V, VGS=10V , RG=3.3Ω
ID=1A
---
5
10
ns
Tr
Rise Time2 , 3
---
8
16
Td(off)
Turn-Off Delay Time2 , 3
---
17
34
Tf
Fall Time2 , 3
---
5
10
Ciss
Input Capacitance
VDS=20V , VGS=0V , F=1MHz
---
722
1440
pF
Coss
Output Capacitance
---
83
166
Crss
Reverse Transfer Capacitance
---
61
122
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2.1
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
6.7
A
ISM
Pulsed Source Current
---
---
13.4
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
40V N-Channel MOSFETs
2020. 02. 14
2/5
Revision No : 0
FTK4910



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