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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FTK4903Z bảng dữ liệu(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4903Z bảng dữ liệu(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Sou rce Voltage ± 20 V ID Drain Current – Continuous (TC=25℃) -38 A Drain Current – Continuous (TC=100℃) -24 A IDM Drain Current – Pulsed1 -152 A EAS Single Pulse Avalanche Energy2 130 mJ IAS Single Pulse Avalanche Current2 51 A PD Power Dissipation (TC=25℃) 52 W Power Dissipation – Derate above 25℃ 0.42 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance Junction to Case --- 2.4 ℃/W RθJA Thermal Resistance Junction to Ambient --- 62 ℃/W BVDSS RDSON ID -40V 14m Ω -38A These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. -40V,-38A, RDS(ON) =14m Ω@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications General Description Features Applications Thermal Characteristics PPAK3x3 Pin Configuration S D G MB / VGA / Vcore POL Applications Load Switch LED Application 40V P-Channel MOSFETs S D G S S D D D 1 5 4 8 Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted) 2020. 01. 14 1/5 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTK4903Z |
Số phần tương tự - FTK4903Z |
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Mô tả tương tự - FTK4903Z |
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