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2SC4627 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN epitaxial planer type(For high-frequency amplification)
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1
Transistor
2SC4627
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency fT.
q
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–75
3:Collector
SS–Mini Type Package
1.6
±0.15
0.8
±0.1
0.4
0.4
1
2
3
0.2
±0.1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
15
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Noise figure
Symbol
VCBO
VEBO
hFE
*
VBE
fT
Cre
PG
NF
Conditions
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
min
30
3
40
450
typ
0.72
650
0.8
24
3.3
max
260
1
Unit
V
V
V
MHz
pF
dB
dB
Marking symbol :
U
*h
FE Rank classification
Rank
B
C
D
hFE
40 ~ 110
65 ~ 160
100 ~ 260
Marking Symbol
UB
UC
UD


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