UT4822L-S08-R datasheet(2/9 Pages) VBSEMI

2 / 9 page

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

3.0

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 µA

- 5.2

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID= 250 µA

1.2

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

On -State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 8 A

0.016



VGS = 4.5 V, ID = 5 A

0.020

Forward Transconductanceb

gfs

VDS = 15 V, ID = 8 A

Dynamica

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, ID = 1 MHz

660

Output Capacitance

Coss

140

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = 15 V, VGS = 10 V, ID = 8 A

14.5

VDS = 15 V, VGS = 4.5 V, ID = 8 A

7.1

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

2.7

Gate Resistance

f = 1 MHz

0.5

2.6

5.2



Turn-On Delay Time

td(on)

VDD = 15 V, RL = 3 

ID  5 A, VGEN = 4.5 V, Rg = 1 

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 3 

ID  5 A, VGEN = 10 V, Rg = 1 

714

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

714

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

2.8

Pulse Diode Forward Currenta

ISM

Body Diode Voltage

VSD

IS = 2 A

0.77

1.1

Body Diode Reverse Recovery Time

trr

IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

918

Reverse Recovery Fall Time

Reverse Recovery Rise Time

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

UT4822L-S08-R

UT4822L-S08-R bảng dữ liệu(PDF) 2 Page - VBsemi Electronics Co.,Ltd

UT4822L-S08-R bảng dữ liệu(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL