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HFS6N90 bảng dữ liệu(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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nhà sản xuất  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
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HFS6N90 bảng dữ liệu(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
900
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=900V
---
---
10
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
3
---
5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=3A
---
---
2.1
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25v, VGS=0V, f=1MHz
---
1680
---
pF
Coss
Output Capacitance
---
110
---
Crss
Reverse Transfer Capacitance
---
11
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=450v.ID=6A
RGEN=25Ω. (Note3,4)
---
35
80
ns
tr
Rise Time
---
90
190
ns
td(off)
Turn-Off Delay Time
---
55
120
ns
tf
Fall Time
---
60
130
ns
Qg
Total Gate Charge
VGS=10V, VDS=720V
ID=6A. (Note3,4)
---
30
40
nC
Qgs
Gate-Source
Charge
---
9
---
nC
Qgd
Gate-Drain “Miller” Charge
---
12
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,ID=6A
---
---
1.4
V
IS
Max. Diode Forward Current
---
---
---
6
A
Ism
Max. Pulsed Forward Curent
---
---
24
A
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
HFS6N90



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