ADPA7008CHIP datasheet(5/26 Pages) AD

5 / 26 page

Data Sheet

ADPA7008CHIP

Rev. 0 | Page 5 of 26

ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter

Rating

Drain Bias Voltage (VDDx)

6.0 V

VGGx

−1.6 V to 0 V

RF Input Power (RFIN)

20 dBm

Continuous Power Dissipation (PDISS),

TA = 85°C (Derate 170 mW/°C Above 85°C)

15.3 W

Junction Temperature to Maintain 1,000,000

Hour Mean Time to Failure (MTTF)

175°C

Nominal Junction Temperature (TJ = 85°C,

VDD = 5 V, IDQ = 1500 mA)

129°C

Temperature Range

Storage

−65°C to +150°C

Operating

−55°C to +85°C

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the

operational section of this specification is not implied.

Operation beyond the maximum operating conditions for

extended periods may affect product reliability.

THERMAL RESISTANCE

Thermal performance is directly linked to the carrier or

substrate on which the die is mounted. Careful attention is

needed with each material used in the thermal path below the

IC.

θJC is the channel to case thermal resistance, channel to bottom

of die using die attach epoxy.

Table 6. Thermal Resistance

Package Type

θJC

Unit

C-10-12

5.87

°C/W

ELECTROSTATIC DISCHARGE (ESD) RATINGS

The following ESD information is provided for handling of

ESD sensitive devices in an ESD protected area only.

Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.

ESD Ratings for ADPA7008CHIP

Table 7. ADPA7008CHIP, 10-Pad Die

ESD Model

Withstand Threshold (V)

Class

HBM

±250

ESD CAUTION

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