FTK3N40D datasheet(2/6 Pages) FS

2 / 6 page

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

ID=250 A, VGS=0V

400

Breakdown Voltage Temperature Coefficient

BVDSS/ Tj ID=250 A, Referenced to 25

0.4

Drain Cut-off Current

IDSS

VDS=400V, VGS=0V,

Gate Threshold Voltage

Vth

VDS=VGS, ID=250 A

2.5

4.5

Gate Leakage Current

IGSS

VGS= 30V, VDS=0V

100

Drain-Source ON Resistance

RDS(ON)

VGS=10V, ID=1.1A

2.8

3.4

Dynamic

Total Gate Charge

VDS=320V, ID=2.2A

VGS=10V

(Note4,5)

4.4

5.8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

2.0

Turn-on Delay time

td(on)

VDD=200V, ID=2.2A

RG=25Ω

(Note4,5)

VGS=10V

Turn-on Rise time

Turn-off Delay time

td(off)

Turn-off Fall time

Input Capacitance

Ciss

VDS=25V, VGS=0V, f=1.0MHz

163

211

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

2.5

Source-Drain Diode Ratings

Continuous Source Current

VGS<Vth

Pulsed Source Current

ISP

Diode Forward Voltage

VSD

IS=2.2A, VGS=0V

1.4

Reverse Recovery Time

trr

IS=2.2A, VGS=0V,

dIs/dt=100A/ s

240

Reverse Recovery Charge

Qrr

0.65

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L = 19mH, IS=2.2A, VDD=50V, RG = 25Ω , Starting Tj = 25 .

Note 3) IS 2A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .

Note 4) Pulse Test : Pulse width

300 , Duty Cycle

2%.

Note 5) Essentially independent of operating temperature.

2019. 09. 27

2/6

Revision No : 0

FTK3N40D/I

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