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BAS716 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BAS716
Giải thích chi tiết về linh kiện  Low-leakage diode
PDF  8 Pages
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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BAS716 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

  BAS716 Datasheet HTML 1Page - NXP Semiconductors BAS716 Datasheet HTML 2Page - NXP Semiconductors BAS716 Datasheet HTML 3Page - NXP Semiconductors BAS716 Datasheet HTML 4Page - NXP Semiconductors BAS716 Datasheet HTML 5Page - NXP Semiconductors BAS716 Datasheet HTML 6Page - NXP Semiconductors BAS716 Datasheet HTML 7Page - NXP Semiconductors BAS716 Datasheet HTML 8Page - NXP Semiconductors  
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2003 Nov 07
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
FEATURES
• Plastic SMD package
• Low leakage current: typ. 0.2 nA
• Switching time: typ. 0.6 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATION
• Low leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in an ultra small SOD523 (SC-79) SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage12


Top view
MAM408
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
Marking code: S1.
The marking bar indicates the cathode.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAS716
plastic surface mounted package; 2 leads
SOD523
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
200
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current square wave; Tj =25 °C prior to surge;
see Fig.4
tp =1 µs
4A
tp =1ms
1A
tp =1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C



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