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8N65KL-TN3-R bảng dữ liệu(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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nhà sản xuất  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Trang chủ  http://www.doingter.cn/
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8N65KL-TN3-R bảng dữ liệu(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
3.8
℃/W
43.3
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
650
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=650V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=3.5A
---
1.1
1.4
Ω
gFS
VGS=40V,ID=3.5A
4
---
7
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
740
---
pF
Coss
Output Capacitance
---
95
---
Crss
Reverse Transfer Capacitance
---
1.3
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=325V, ID=7A,
RGEN=2.5Ω
4,5
---
12
---
ns
tr
Rise Time
---
26
---
ns
td(off)
Turn-Off Delay Time
---
29
---
ns
tf
Fall Time
---
27
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=520V,
ID=7A
4,5
---
15.6
---
nC
Qgs
Gate-Source
Charge
---
4.8
---
nC
RθJA
Thermal Resistance, Junction-to-Ambient
Forward Transconductance
8N65KL-TN3-R



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