H1M datasheet(1/2 Pages) FS

tên linh kiện	H1M

Giải thích chi tiết về linh kiện	High Efficient Rectifier D iode

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nhà sản xuất	FS [First Silicon Co., Ltd]

Trang chủ	http://www.firstsilicon.co.kr/

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2012 08 13

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

H1A ~ H1M

High Efficient Rectifier Diode

■ Features

■ Outline Dimensions and Mark

●

Io

1.0A

●

VRRM

50V~1000V

●

Glass passivatedchip

●

High surge forward current capability

■ Applications

●

For general power supply

single - phase rectifier

■ Limiting Values（Absolute Maximum Rating)

Item

Symbol Unit

Conditions

H1

A

B

D

G

J

K

M

Repetitive Peak Reverse

Voltage

VRRM

V

50

100 200 400 600 800 1000

Average Rectifed Output

i

Current

IO

A

60Hz One-way half-wave, R-load,Ta=75℃

1.0

Surge(Non-repetitive)

Forward Current

IFSM

A

60HZ sine wave, 1 cycle, Tj=25℃

30

Storage Temperature

Tstg

℃

-55 ~+150

Junction Temperature

Tj

℃

-55 ~+150

■ Electrical Characteristics （Ta=25℃ Unless otherwise specified）

Item

Symbol Unit

Test Condition

H1

A

B

D

G

J

K

M

Peak Forward Voltage

VFM

V

IFM=1.0A

1.0

1.3

1.7

Maximum reverse recovery

time

trr

ns

IF=0.5A,IR=1.0A,IRR=0.25A

50

75

Peak Reverse Current

IRRM

μA

VRM=VRRM , Ta=25℃

5

Thermal Resistance

RθJ-L

℃/W

Between junction and lead

20

Dimensions in inches and (millimeters)

SOD-123F

.047(1.20)

.039(1.00)

.010(0.25)

.004(0.10)

.043(1.10)

.035(0.90)

.075(1.90)

.063(1.60)

.002(0.05)

.001(0.02)

Số phần tương tự - H1M

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