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FTK8974P bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

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FTK8974P bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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Electrical Characteristics (TJ=25℃, unless otherwise noted)
2018. 06. 25
2/5
Revision No : 0
FTK8974P
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
80
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=64V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
3.2
3.9
mΩ
VGS=4.5V , ID=10A
---
4.6
6.2
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.8
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=5A
---
10
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=64V , VGS=10V , ID=10A
---
88
132
nC
Qgs
Gate-Source Charge3 , 4
---
10.2
15
Qgd
Gate-Drain Charge3 , 4
---
24
32
Td(on)
Turn-On Delay Time3 , 4
VDD=40V , VGS=10V , RG=6Ω
ID=1A
---
20
40
ns
Tr
Rise Time3 , 4
---
13
26
Td(off)
Turn-Off Delay Time3 , 4
---
36
72
Tf
Fall Time3 , 4
---
18
36
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
5160
10200
pF
Coss
Output Capacitance
---
1346
2700
Crss
Reverse Transfer Capacitance
---
40
80
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.65
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
120
A
ISM
Pulsed Source Current
---
---
240
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=70A.,RG=25Ω,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings



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