FTK7002EN datasheet(2/5 Pages) FS

2 / 5 page

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 100 A

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 30 V

1.0

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 20 V,

T = 85 °C

1.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±10 V

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±5 V

1.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±5 V

T = 85 °C

1.0

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 100 A

0.5

1.0

1.5

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 154 mA

1.4

7.0

VGS = 2.5 V, ID = 154 mA

2.3

7.5

Forward Transconductance

gFS

VDS = 3 V, ID = 154 mA

CAPACITANCES

Input Capacitance

CISS

VDS = 5.0 V, f = 1 MHz,

VGS = 0 V

11.5

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

3.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 5.0 V,

ID = 75 mA, RG = 10

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

Drain−Source Diode Characteristics

Forward Diode Voltage

VSD

VGS = 0 V, IS = 0.154 mA

0.77

0.9

2. Pulse Test: pulse width

300 s, duty cycle

2%.

3. Switching characteristics are independent of operating junction temperatures.

2009. 10. 28

2/5

Revision No : 0

FTK7002EN

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