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FTK6982DFN56 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

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Giải thích chi tiết về linh kiện  65V N-Channel MOSFETs
PDF  5 Pages
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FTK6982DFN56 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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65V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
65
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
4.6
5.6
mΩ
VGS=4.5V , ID=15A
---
8.2
10.5
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
10
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=30V , VGS=10V , ID=15A
---
34.7
70
nC
Qgs
Gate-Source Charge3 , 4
---
4.9
10
Qgd
Gate-Drain Charge3 , 4
---
11.1
22
Td(on)
Turn-On Delay Time3 , 4
VDD=30V , VGS=10V , RG=6Ω
ID=1A
---
10.2
21
ns
Tr
Rise Time3 , 4
---
16
32
Td(off)
Turn-Off Delay Time3 , 4
---
42
84
Tf
Fall Time3 , 4
---
38
76
Ciss
Input Capacitance
VDS=30V , VGS=0V , F=1MHz
---
1910
3800
pF
Coss
Output Capacitance
---
520
1040
Crss
Reverse Transfer Capacitance
---
30
60
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.2
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
83
A
ISM
Pulsed Source Current
---
---
166
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=10V,IS=10A , di/dt=100A/µs
TJ=25℃
---
48.4
---
ns
Qrr
Reverse Recovery Charge
---
54.2
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=53A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2019. 07. 23
2/5
Revision No : 0
FTK6982DFN56



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