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FTK4912D bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK4912D
Giải thích chi tiết về linh kiện  40V N-Channel MOSFETs
PDF  5 Pages
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FTK4912D bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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40V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=125
℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=12A
---
25
30
mΩ
VGS=4.5V , ID=10A
---
32
40
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
`gfs
Forward Transconductance
VDS=10V , ID=3A
---
9
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=20V , VGS=4.5V , ID=5A
---
4.5
10
nC
Qgs
Gate-Source Charge2 , 3
---
1.5
2.4
Qgd
Gate-Drain Charge2 , 3
---
1.9
5
Td(on)
Turn-On Delay Time2 , 3
VDD=20V , VGS=4.5V , RG=25Ω
ID=1A
---
3.2
6
ns
Tr
Rise Time2 , 3
---
8.6
16
Td(off)
Turn-Off Delay Time2 , 3
---
18
36
Tf
Fall Time2 , 3
---
6
12
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
420
800
pF
Coss
Output Capacitance
---
65
120
Crss
Reverse Transfer Capacitance
---
40
80
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.2
2.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
23
A
ISM
Pulsed Source Current
---
---
46
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25
℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2018. 06. 14
2/5
Revision No : 0
FTK4912D



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