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FTK4909 bảng dữ liệu(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4909 bảng dữ liệu(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Sou rce Voltage ±20 V ID Drain Current – Continuous (TC=25 ℃) -6.5 A Drain Current – Continuous (TC=100 ℃) -4.1 A IDM Drain Current – Pulsed1 -26 A EAS Single Pulse Avalanche Energy2 31 mJ IAS Single Pulse Avalanche Current2 25 A PD Power Dissipation (TC=25 ℃) 3.3 W Power Dissipation – Derate above 25 ℃ 0.03 W/ ℃ TSTG Storage Temperature Range -50 to 150 ℃ TJ Operating Junction Temperature Range -50 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 38 ℃/W BVDSS RDSON ID -40V 45m Ω -6.5A These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. -40V,-6.5A, RDS(ON) =45m Ω@VGS = -10V Improved dv/dt capability Fast switching Green Device Available General Description Features Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics SOP-8 Pin Configuration D S G D G S S S D D D 40V P-Channel MOSFETs 2018. 09. 17 1/5 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTK4909 |
Số phần tương tự - FTK4909 |
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Mô tả tương tự - FTK4909 |
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