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FTK4906Z bảng dữ liệu(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4906Z bảng dữ liệu(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() 40V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Sou rce Voltage ±20 V ID Drain Current – Continuous (TC=25 ℃) 35 A Drain Current – Continuous (TC=100 ℃) 22.1 A IDM Drain Current – Pulsed1 140 A PD Power Dissipation (TC=25 ℃) 44 W Power Dissipation – Derate above 25 ℃ 0.36 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 2.8 ℃/W BVDSS RDSON ID 40V 9m Ω 35A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 40V, 35A, RDS(ON)=9m Ω@VGS = 10V Improved dv/dt capability Fast switching Green Device Available General Description Features Applications Notebook Load Switch LED applications Hand-Held Device Thermal Characteristics PPAK3x3 Pin Configuration D G S S D G S S D D D 1 5 4 8 2019. 07. 10 1/5 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTK4906Z Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted) |
Số phần tương tự - FTK4906Z |
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Mô tả tương tự - FTK4906Z |
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