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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FTK4906D bảng dữ liệu(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4906D bảng dữ liệu(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  2019. 02. 11 1/5 SEMICONDUCTOR TECHNICAL DATA FTK4906D Revision No : 1 40V N-Channel MOSFETs BVDSS RDSON ID 40V 8.5m Ω 50A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 40V,50A, RDS(ON) =8.5 mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics TO-252 Pin Configuration Notebook Load Switch LED applications Hand-Held Device Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Sou rce Voltage ± 20 V ID Drain Current – Continuous (TC=25℃) 50 A Drain Current – Continuous (TC=100℃) 31.6 A IDM Drain Current – Pulsed 1 200 A PD Power Dissipation (TC=25℃) 54 W Power Dissipation – Derate above 25℃ 0.43 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 2.31 ℃/W 1 1. Gate 2. Drain 3. Source 3 2 |
Số phần tương tự - FTK4906D |
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Mô tả tương tự - FTK4906D |
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