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FTK4904D bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK4904D
Giải thích chi tiết về linh kiện  40V N-Channel MOSFETs
PDF  5 Pages
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FTK4904D bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

  FTK4904D Datasheet HTML 1Page - First Silicon Co., Ltd FTK4904D Datasheet HTML 2Page - First Silicon Co., Ltd FTK4904D Datasheet HTML 3Page - First Silicon Co., Ltd FTK4904D Datasheet HTML 4Page - First Silicon Co., Ltd FTK4904D Datasheet HTML 5Page - First Silicon Co., Ltd  
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40V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
4.2
5.5
mΩ
VGS=4.5V , ID=10A
---
5.3
7
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=10A
---
16
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=32V , VGS=4.5V , ID=10A
---
25
50
nC
Qgs
Gate-Source Charge2 , 3
---
6.4
13
Qgd
Gate-Drain Charge2 , 3
---
12.1
24
Td(on)
Turn-On Delay Time2 , 3
VDD=20V, VGS=10V , RG=3.3Ω
ID=1A
---
14.2
28
ns
Tr
Rise Time2 , 3
---
18.3
36
Td(off)
Turn-Off Delay Time2 , 3
---
38.8
76
Tf
Fall Time2 , 3
---
13.9
28
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
2410
3600
pF
Coss
Output Capacitance
---
233
400
Crss
Reverse Transfer Capacitance
---
152
230
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.6
3.2
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
80
A
ISM
Pulsed Source Current
---
---
160
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2018. 12. 04
2/5
Revision No : 0
FTK4904D



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