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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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LCE6005AS bảng dữ liệu(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE6005AS bảng dữ liệu(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  LCE6005AS Description The LCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE6005AS LCE6005AS SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5 A Drain Current-Continuous(TC=100℃) ID (100℃) 3.5 A Pulsed Drain Current IDM 24 A Maximum Power Dissipation PD 2 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-A mbient (Note 2) RθJA 62.5 /W ℃ LCE N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2015 1/6 |
Số phần tương tự - LCE6005AS |
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Mô tả tương tự - LCE6005AS |
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