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LTC7802EUFDM-3.3 bảng dữ liệu(PDF) 19 Page - Analog Devices

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LTC7802EUFDM-3.3 bảng dữ liệu(HTML) 19 Page - Analog Devices

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LTC7802-3.3
19
Rev. 0
For more information www.analog.com
Selecting the Light-Load Operating Mode
The LTC7802-3.3 can be set to enter high efficiency Burst
Mode operation, constant frequency pulse-skipping mode
or forced continuous conduction mode at light load cur-
rents. To select Burst Mode operation, tie the MODE to
ground. To select forced continuous operation, tie the
MODE pin to INTVCC. To select pulse-skipping mode,
tie the MODE pin to INTVCC through a 100k resistor.
An internal 100k resistor from the MODE pin to ground
selects Burst Mode if the pin is floating. When synchro-
nized to an external clock through the PLLIN/SPREAD
pin, the LTC7802-3.3 operates in pulse-skipping mode
if it is selected, or in forced continuous mode otherwise.
Table 2. summarizes the use of the MODE pin to select
the light load operating mode.
Table 2.
MODE PIN
LIGHT-LOAD
OPERATING MODE
MODE WHEN
SYNCHRONIZED
0V or Floating
Burst Mode
Forced Continuous
100k to INTVCC
Pulse-Skipping
Pulse-Skipping
INTVCC
Forced Continuous
Forced Continuous
In general, the requirements of each application will
dictate the appropriate choice for light-load operating
mode. In Burst Mode operation, the inductor current is
not allowed to reverse. The reverse current comparator
turns off the bottom MOSFET just before the inductor
current reaches zero, preventing it from reversing and
going negative. Thus, the regulator operates in discon-
tinuous operation. In addition, when the load current is
very light, the inductor current will begin bursting at fre-
quencies lower than the switching frequency and enter a
low current sleep mode when not switching. As a result,
Burst Mode operation has the highest possible efficiency
at light load.
In forced continuous mode, the inductor current is
allowed to reverse at light loads and switches at the same
frequency regardless of load. In this mode, the efficiency
at light loads is considerably lower than in Burst Mode
operation. However, continuous operation has the advan-
tage of lower output voltage ripple and less interference
to audio circuitry. In forced continuous mode, the output
ripple is independent of load current.
In pulse-skipping mode, constant frequency operation
is maintained down to approximately 1% of designed
maximum output current. At very light loads, the PWM
comparator may remain tripped for several cycles and
force the top MOSFET to stay off for the same number of
cycles (i.e., skipping pulses). The inductor current is not
allowed to reverse (discontinuous operation). This mode,
like forced continuous operation, exhibits low output rip-
ple as well as low audio noise and reduced RF interference
as compared to Burst Mode operation. It provides higher
light load efficiency than forced continuous mode, but not
nearly as high as Burst Mode operation. Consequently,
pulse-skipping mode represents a compromise between
light load efficiency, output ripple and EMI.
In some applications, it may be desirable to change light
load operating mode based on the conditions present in
the system. For example, if a system is inactive, one might
select high efficiency Burst Mode operation by keeping the
MODE pin set to 0V. When the system wakes, one might
send an external clock to PLLIN/SPREAD, or tie MODE to
INTVCC to switch to low noise forced continuous mode.
Such on-the-fly mode changes can allow an individual
application to benefit from the advantages of each light
load operating mode.
Power MOSFET Selection
Two external power MOSFETs must be selected for each
controller in the LTC7802-3.3: one N-channel MOSFET
for the top (main) switch and one N-channel MOSFET
for the bottom (synchronous) switch. The peak-to-peak
gate drive levels are set by the INTVCC regulation point of
5.1V. Consequently, logic level threshold MOSFETs must
be used in most applications. Pay close attention to the
BVDSS specification for the MOSFETs as well; many of the
logic level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the on
resistance RDS(ON), Miller capacitance CMILLER, input volt-
age, and maximum output current. Miller capacitance,
CMILLER, can be approximated from the gate charge curve
usually provided on the MOSFET manufacturers’ data
sheet. CMILLER is equal to the increase in gate charge
along the horizontal axis while the curve is approximately
flat divided by the specified change in VDS. This result is
APPLICATIONS INFORMATION



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