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LTC7802EUFDM-3.3 bảng dữ liệu(PDF) 19 Page - Analog Devices |
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LTC7802EUFDM-3.3 bảng dữ liệu(HTML) 19 Page - Analog Devices |
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19 / 34 page ![]() LTC7802-3.3 19 Rev. 0 For more information www.analog.com Selecting the Light-Load Operating Mode The LTC7802-3.3 can be set to enter high efficiency Burst Mode operation, constant frequency pulse-skipping mode or forced continuous conduction mode at light load cur- rents. To select Burst Mode operation, tie the MODE to ground. To select forced continuous operation, tie the MODE pin to INTVCC. To select pulse-skipping mode, tie the MODE pin to INTVCC through a 100k resistor. An internal 100k resistor from the MODE pin to ground selects Burst Mode if the pin is floating. When synchro- nized to an external clock through the PLLIN/SPREAD pin, the LTC7802-3.3 operates in pulse-skipping mode if it is selected, or in forced continuous mode otherwise. Table 2. summarizes the use of the MODE pin to select the light load operating mode. Table 2. MODE PIN LIGHT-LOAD OPERATING MODE MODE WHEN SYNCHRONIZED 0V or Floating Burst Mode Forced Continuous 100k to INTVCC Pulse-Skipping Pulse-Skipping INTVCC Forced Continuous Forced Continuous In general, the requirements of each application will dictate the appropriate choice for light-load operating mode. In Burst Mode operation, the inductor current is not allowed to reverse. The reverse current comparator turns off the bottom MOSFET just before the inductor current reaches zero, preventing it from reversing and going negative. Thus, the regulator operates in discon- tinuous operation. In addition, when the load current is very light, the inductor current will begin bursting at fre- quencies lower than the switching frequency and enter a low current sleep mode when not switching. As a result, Burst Mode operation has the highest possible efficiency at light load. In forced continuous mode, the inductor current is allowed to reverse at light loads and switches at the same frequency regardless of load. In this mode, the efficiency at light loads is considerably lower than in Burst Mode operation. However, continuous operation has the advan- tage of lower output voltage ripple and less interference to audio circuitry. In forced continuous mode, the output ripple is independent of load current. In pulse-skipping mode, constant frequency operation is maintained down to approximately 1% of designed maximum output current. At very light loads, the PWM comparator may remain tripped for several cycles and force the top MOSFET to stay off for the same number of cycles (i.e., skipping pulses). The inductor current is not allowed to reverse (discontinuous operation). This mode, like forced continuous operation, exhibits low output rip- ple as well as low audio noise and reduced RF interference as compared to Burst Mode operation. It provides higher light load efficiency than forced continuous mode, but not nearly as high as Burst Mode operation. Consequently, pulse-skipping mode represents a compromise between light load efficiency, output ripple and EMI. In some applications, it may be desirable to change light load operating mode based on the conditions present in the system. For example, if a system is inactive, one might select high efficiency Burst Mode operation by keeping the MODE pin set to 0V. When the system wakes, one might send an external clock to PLLIN/SPREAD, or tie MODE to INTVCC to switch to low noise forced continuous mode. Such on-the-fly mode changes can allow an individual application to benefit from the advantages of each light load operating mode. Power MOSFET Selection Two external power MOSFETs must be selected for each controller in the LTC7802-3.3: one N-channel MOSFET for the top (main) switch and one N-channel MOSFET for the bottom (synchronous) switch. The peak-to-peak gate drive levels are set by the INTVCC regulation point of 5.1V. Consequently, logic level threshold MOSFETs must be used in most applications. Pay close attention to the BVDSS specification for the MOSFETs as well; many of the logic level MOSFETs are limited to 30V or less. Selection criteria for the power MOSFETs include the on resistance RDS(ON), Miller capacitance CMILLER, input volt- age, and maximum output current. Miller capacitance, CMILLER, can be approximated from the gate charge curve usually provided on the MOSFET manufacturers’ data sheet. CMILLER is equal to the increase in gate charge along the horizontal axis while the curve is approximately flat divided by the specified change in VDS. This result is APPLICATIONS INFORMATION |
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