ESD Protection Diode – TPD5030

Monolithic dual diode transient voltage suppressor in bare die form



Configures as x2 unidirectional or x1 bidirectional (x2 wire)



Very low leakage



Low capacitance



5V stand-off voltage



High reliability tested grades.

Rev 1.0

29/11/20

Features:

Ordering Information

The following part suffixes apply:



No suffix - MIL-STD-750 /2073 Visual Inspection



“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT



“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

290 (11.42)

90 (3.54)

CATHODE

CATHODE

90 (3.54)

CHIP BACK MUST BE CONNECTED TO ANODE

NOTE:

THIS MONOLITHIC CHIP COMPRISES X2 UNIDIRECTIONAL TVS

DIODES WITH COMMON ANODE CONNECTION.

Die Dimensions in µm (mils)



Default – Die in Waffle Pack (400 per tray capacity)

Die Size (Unsawn)

290 x 350

11.42 x 13.78

µm

mils

Cathode Pad Size



Sawn Wafer on Tape – By specific request

90 x 90

3.54 x 3.54

µm

mils

Die Thickness



Unsawn Wafer – By specific request



Die Thickness <> 230µm(9 Mils) – On request



With additional electrical selection – On request

230 (±15)

9.05 (±0.59)

µm

mils

Top Metal Composition

Al

Back Metal Composition

Si

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