Monolithic Transistor Array – SiS3045F

Rev 1.1

20/10/17

PARAMETER

SYMBOL

TEST

CONDITIONS

MIN

TYP

MAX

UNITS

Admittance Characteristics

Forward Transfer Admittance

(Figure 12)

f = 1 kHz

-

31 - j1.5

-

-

Input Admittance (Figure 13)

f = 1 kHz

-

0.3 + j0.04

-

-

Output Admittance (Figure 14)

f = 1 kHz

-

0.001+j0.03

-

-

Reverse Transfer Admittance

(Figure 15)

f = 1 kHz

-

Fig 14

-

-

Gain Bandwidth Product (Figure 16)

300

550

-

MHz

Emitter-to-Base Capacitance

-

0.6

-

pF

Collector-to-Base Capacitance

-

0.58

-

pF

Collector-to-Substrate Capacitance

-

2.8

-

pF

Notes: 1. Each transistor collector is isolated from the substrate by an integral diode. The substrate (Pin 13) must be connected to the most negative point in

the external circuit to maintain isolation between transistors & normal transistor action. 2. Actual forcing current is via the emitter for this test.

FIGURE 1. Base-To-Collector Current vs Temperature

Typical Performance Characteristics

FIGURE 2. Collector-To-Emitter Cutoff Current vs Temperature

FIGURE 3. Static Forward Current Transfer Ratio & Beta

FIGURE 4. Input Offset Current for matched

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