MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes

Product Overview

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage

applications. MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package.

Figure 2 • Anti-parallel MSC2X30SDA120J

Figure 1 • Parallel MSC2X31SDA120J

Features

The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:

• No reverse recovery

• Low forward voltage

• Low leakage current

• Avalanche-energy rated

• RoHS compliant

• Isolated voltage to 2500 V

Benefits

The following are benefits of the MSC2X31SDA120J and MSC2X30SDA120J devices:

• Outstanding performance at high-frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction-to-case thermal resistance

• RoHS compliant

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053-4104 MSC2X31/30SDA120J Datasheet Revision A