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2N7000 bảng dữ liệu(PDF) 1 Page - Microchip Technology

tên linh kiện 2N7000
Giải thích chi tiết về linh kiện  N-Channel Enhancement-Mode Vertical DMOS FET
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nhà sản xuất  MICROCHIP [Microchip Technology]
Trang chủ  http://www.microchip.com
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2N7000 bảng dữ liệu(HTML) 1 Page - Microchip Technology

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2021 Microchip Technology Inc.
DS20005695A-page 1
2N7000
Features
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and High Gain
Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps,
Memory, Displays, Bipolar Transistors, etc.)
General Description
The 2N7000 is an Enhancement-mode (normally-off)
transistor that uses a vertical DMOS structure and a
well-proven silicon gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors as well as
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Package Type
See Table 3-1 for pin information.
3-lead TO-92
(Top view)
GATE
SOURCE
DRAIN
N-Channel Enhancement-Mode Vertical DMOS FET


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