RFP30P05 datasheet(2/7 Pages) VBSEMI

2 / 7 page

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VDS = 0 V, ID = - 250 µA

- 60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

- 3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 250

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 60 V, VGS = 0 V, TJ = 150 °C

- 250

On-State Drain Currenta

ID(on)

VDS - 10 V, VGS = - 10 V

- 30

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 14 A

0.055



VGS = - 4.5 V, ID = - 12 A

0.075

Forward Transconductancea

gfs

VDS = - 20 V, ID = - 14 A

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = - 30 V, f = 1 MHz

2765

Output Capacitance

Coss

330

Reverse Transfer Capacitance

Crss

280

Total Gate Chargec

VDS = - 30 V, VGS = - 10 V, ID = - 14 A

100

Gate-Source Chargec

Qgs

13.5

Gate-Drain Chargec

Qgd

Gate Resistance

f = 1 MHz

0.5

2.5



Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 2 

ID  - 10 A, VGEN = - 10 V, Rg = 1 

Rise Timec

Turn-Off Delay Timec

td(off)

Fall Timec

Drain-Source Body Diode Ratings and Characteristics TC = 25 °C

Continuous Current

- 36

Pulsed Current

ISM

- 100

Forward Voltagea

VSD

IF = - 10 A, VGS = 0 V

- 0.8

- 1.5

Reverse Recovery Time

trr

IF = - 10 A, dI/dt = 100 A/µs

Peak Reverse Recovery Current

IRM(REC)

2.3

3.5

Reverse Recovery Charge

Qrr

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

RFP30P05

RFP30P05 bảng dữ liệu(PDF) 2 Page - VBsemi Electronics Co.,Ltd

RFP30P05 bảng dữ liệu(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL