TSZ181 datasheet(6/43 Pages) STMICROELECTRONICS

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Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Iout

Isink (Vout = VCC)

T = 25 °C

-40 °C < T< 125 °C

7.5

Isource (Vout = 0 V)

T = 25 °C

-40 °C < T< 125 °C

ICC

Supply current (per channel, Vout = VCC/2,

RL > 1 MΩ)

T = 25 °C

0.7

-40 °C < T< 125 °C

1.2

AC performance

GBP

Gain bandwidth product

T = 25 °C, RL = 10 kΩ,

CL = 100 pF

2.8

MHz

-40 °C < T< 125 °C,

RL = 10 kΩ, CL = 100 pF

1.6

Φm

Phase margin

RL = 10 kΩ, CL = 100 pF

degrees

Gain margin

Slew rate (3)

T = 25 °C

2.6

4.5

V/µs

-40 °C < T< 125 °C

2.1

Settling time

To 0.1%, Vin = 1.2 Vpp

550

Equivalent input noise voltage density

f = 1 kHz

nV/√Hz

f = 10 kHz

en-pp

Voltage noise

f = 0.1 to 10 Hz

0.5

µVpp

Channel separation

f = 1 kHz

120

tinit

Initialization time, G = 100 (4)

T = 25 °C

µs

-40 °C < T< 125 °C

100

1. See Section 5.5 Input offset voltage drift over temperature. Input offset measurements are performed on

x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature.

2. Guaranteed by design.

3. Slew rate value is calculated as the average between positive and negative slew rates.

4. Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and

output voltage stabilization

Table 5. Electrical characteristics at VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C, and RL = 10 kΩ connected to

VCC/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

T = 25 °C

µV

-40 °C < T< 125 °C

ΔVio/ΔT

Input offset voltage drift (1)

-40 °C < T< 125 °C

0.1

µV/°C

Iib

Input bias current (Vout = VCC//2)

T = 25 °C

200 (2)

-40 °C < T< 125 °C

300 (2)

Iio

Input offset current (Vout = VCC/2)

T = 25 °C

400 (2)

-40 °C < T< 125 °C

600 (2)

TSZ181, TSZ182

Electrical characteristics

DS11863 - Rev 5

page 6/43

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