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STM32F334C6U6TR bảng dữ liệu(PDF) 80 Page - STMicroelectronics |
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STM32F334C6U6TR bảng dữ liệu(HTML) 80 Page - STMicroelectronics |
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80 / 125 page ![]() Electrical characteristics STM32F334x4 STM32F334x6 STM32F334x8 80/125 DS9994 Rev 9 Table 66, respectively. Unless otherwise specified, the parameters given are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 19. Table 52. I/O AC characteristics(1) OSPEEDRy [1:0] value(1) Symbol Parameter Conditions Min. Max. Unit x0 fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V - 2(3) MH z tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V - 125(3) ns tr(IO)out Output low to high level rise time - 125(3) 01 fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V - 10(3) MH z tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V - 25 (3) ns tr(IO)out Output low to high level rise time - 25 (3) 11 fmax(IO)out Maximum frequency(2) CL = 30 pF, VDD = 2.7 V to 3.6 V - 50(3) MH z CL = 50 pF, VDD = 2.7 V to 3.6 V - 30(3) MH z CL = 50 pF, VDD = 2 V to 2.7 V - 20(3) MH z tf(IO)out Output high to low level fall time CL = 30 pF, VDD = 2.7 V to 3.6 V - 5(3) ns CL = 50 pF, VDD = 2.7 V to 3.6 V - 8(3) CL = 50 pF, VDD = 2 V to 2.7 V - 12(3) tr(IO)out Output low to high level rise time CL = 30 pF, VDD = 2.7 V to 3.6 V - 5(3) CL = 50 pF, VDD = 2.7 V to 3.6 V - 8(3) CL = 50 pF, VDD = 2 V to 2.7 V - 12(3) FM+ configuration(4) fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V -2(4) MH z tf(IO)out Output high to low level fall time -12(4) ns tr(IO)out Output low to high level rise time -34(4) -tEXTIpw Pulse width of external signals detected by the EXTI controller -10 - ns 1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the RM0364 reference manual for a description of GPIO Port configuration register. 2. The maximum frequency is defined in Figure 24. 3. Guaranteed by design, not tested in production. |
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