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FTK2219PP bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK2219PP
Giải thích chi tiết về linh kiện  20V Dual P Channel MOSFETs
PDF  4 Pages
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FTK2219PP bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

  FTK2219PP Datasheet HTML 1Page - First Silicon Co., Ltd FTK2219PP Datasheet HTML 2Page - First Silicon Co., Ltd FTK2219PP Datasheet HTML 3Page - First Silicon Co., Ltd FTK2219PP Datasheet HTML 4Page - First Silicon Co., Ltd  
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20V Dual P Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-20
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=
-1mA
---
-0.01
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=
-20V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-16V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 8V , VDS=0V
---
---
±
20
uA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-4.5V , ID=-0.3A
---
440
600
VGS=
-2.5V , ID=-0.2A
---
610
850
VGS=
-1.8V , ID=-0.1A
---
810
1200
VGS=
-1.5V , ID=-0.1A
1020
1600
VGS=
-1.2V , ID=-0.1A
---
1800
3000
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =
-250uA
-0.3
-0.6
-1.0
V
VGS(th)
VGS(th) Temperature Coefficient
---
3
---
mV/℃
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=
-10V , VGS=-4.5V , ID=-0.2A
---
1
2
nC
Qgs
Gate-Source Charge2 , 3
---
0.28
0.5
Qgd
Gate-Drain Charge2 , 3
---
0.18
0.4
Td(on)
Turn-On Delay Time2 , 3
VDD=
-10V , VGS=-4.5V , RG=10Ω
ID=
-0.2A
---
8
16
ns
Tr
Rise Time2 , 3
---
5.2
10
Td(off)
Turn-Off Delay Time2 , 3
---
30
60
Tf
Fall Time2 , 3
---
18
36
Ciss
Input Capacitance
VDS=
-10V , VGS=0V , F=1MHz
---
40
78
pF
Coss
Output Capacitance
---
15
30
Crss
Reverse Transfer Capacitance
---
6.5
13
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-0.54
A
ISM
Pulsed Source Current
---
---
-1.08
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-0.2A , TJ=25℃
---
---
-1
V
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
2019. 01. 22
2/4
Revision No : 0
FTK2219PP



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