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FTK2116DFN22 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK2116DFN22
Giải thích chi tiết về linh kiện  20V NP Dual Channel MOSFETs
PDF  6 Pages
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FTK2116DFN22 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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20V N+P Dual Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
BVDSS/ TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.02
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=20V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±10V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V , ID=3A
---
30
40
mΩ
VGS=2.5V , ID=2A
---
42
55
mΩ
VGS=1.8V , ID=1.5A
55
70
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.3
0.6
1
V
VGS(th)
VGS(th) Temperature Coefficient
---
-2
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=2A
---
4.4
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=10V , VGS=4.5V , ID=3A
---
5.8
10
nC
Qgs
Gate-Source Charge2 , 3
---
0.6
1.5
Qgd
Gate-Drain Charge2 , 3
---
1.5
3
Td(on)
Turn-On Delay Time2 , 3
VDD=10V , VGS=4.5V , RG=25Ω
ID=1A
---
2.9
6
ns
Tr
Rise Time2 , 3
---
8.4
16
Td(off)
Turn-Off Delay Time2 , 3
---
19.2
38
Tf
Fall Time2 , 3
---
5.6
12
Ciss
Input Capacitance
VDS=15V , VGS=0V , F=1MHz
---
315
600
pF
Coss
Output Capacitance
---
50
80
Crss
Reverse Transfer Capacitance
---
40
60
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
3.8
A
ISM
Pulsed Source Current
---
---
7.6
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
N-CH Electrical Characteristics (TJ=25 ℃, unless otherwise)
Drain-Source Diode Characteristics and Maximum Ratings
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
FTK2116DFN22
2018. 10. 08
2/6
Revision No : 0



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