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FTK0959D bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện FTK0959D
Giải thích chi tiết về linh kiện  100V P-Channel MOSFETs
PDF  5 Pages
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nhà sản xuất  FS [First Silicon Co., Ltd]
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FTK0959D bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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100V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-100
---
---
V
IDSS
Drain-Source Leakage Current
VDS=-100V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-80V , VGS=0V , TJ=85℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-15A
---
36
45
mΩ
VGS=-4.5V , ID=-10A
---
40
55
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
---
-2.5
V
gfs
Forward Transconductance
VDS=-10V , ID=-5A
---
22
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=-50V , VGS=-10V , ID=-10A
---
98
150
nC
Qgs
Gate-Source Charge3,4
---
16.2
30
Qgd
Gate-Drain Charge3,4
---
13.8
26
Td(on)
Turn-On Delay Time3,4
VDD=-50V , VGS=-10V , RG=25Ω
ID=-5A
---
58
105
ns
Tr
Rise Time3,4
---
24
50
Td(off)
Turn-Off Delay Time3,4
---
215
450
Tf
Fall Time3,4
---
94
180
Ciss
Input Capacitance
VDS=-25V , VGS=0V , F=1MHz
---
6315
9000
pF
Coss
Output Capacitance
---
220
330
Crss
Reverse Transfer Capacitance
---
50
100
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-30
A
ISM
Pulsed Source Current
---
---
-60
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=-50V,VGS=-10V,L=0.1mH,IAS=-60A.,Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2019. 11. 18
2/5
Revision No : 0
FTK0959D



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